Metal-insulator-metal capacitor and method of fabrication

ABSTRACT

A method and structure for a MIM capacitor, the structure including: an electronic device, comprising: an interlevel dielectric layer formed on a semiconductor substrate; a copper bottom electrode formed in the interlevel dielectric layer, a top surface of the bottom electrode co-planer with a top surface of the interlevel dielectric layer; a conductive diffusion barrier in direct contact with the top surface of the bottom electrode; a MIM dielectric in direct contact with a top surface of the conductive diffusion barrier; and a top electrode in direct contact with a top surface of the MIM dielectric. The conductive diffusion barrier may be recessed into the copper bottom electrode or an additional recessed conductive diffusion barrier provided. Compatible resistor and alignment mark structures are also disclosed.

BACKGROUND OF INVENTION

1. Field of the Invention

The present invention relates to the field of semiconductor structuresand processing; more specifically, it relates to a metal-insulator-metal(MIM) capacitor compatible with high K dielectric materials and coppermetallurgy and the method of fabricating the MIM.

2. Background of the Invention

MIM capacitors are increasingly being used in integrated circuits,especially those integrated circuits used in radio frequency (RF) andother high-frequency applications. The requirements for high performancecapacitors compatible with ever high frequency applications has driventhe industry to use high-k dielectric materials for the insulator in theMIM capacitor. However, high-k dielectrics have serious shortcomingswhen used in integrated circuits having copper interconnections, mostnotably the poor resistance to copper diffusion, which can lead to yieldor reliability problems. Therefore, there is a need for a MIM structureand fabrication method compatible with copper interconnectiontechnology.

SUMMARY OF INVENTION

A first aspect of the present invention is an electronic device,comprising: an interlevel dielectric layer formed on a semiconductorsubstrate; a copper bottom electrode formed in the interlevel dielectriclayer, a top surface of the bottom electrode co-planer with a topsurface of the interlevel dielectric layer; a conductive diffusionbarrier in direct contact with the top surface of the bottom electrode;a MIM dielectric in direct contact with a top surface of the conductivediffusion barrier; and a top electrode in direct contact with a topsurface of the MIM dielectric.

A second aspect of the present invention is an electronic device,comprising: an interlevel dielectric layer formed on a semiconductorsubstrate; a copper bottom electrode formed in the interlevel dielectriclayer; a conductive diffusion barrier in direct contact with a topsurface of the bottom electrode, the top surface of the bottom electroderecessed below a top surface of the interlevel dielectric layer, the topsurface of the conductive diffusion barrier co-planar with the topsurface of the interlevel dielectric layer; a MIM dielectric in directcontact with a top surface of the conductive diffusion barrier; and atop electrode in direct contact with a top surface of the MIMdielectric.

A third aspect of the present invention is a method of fabricating anelectronic device, comprising: (a) providing a semiconductor substrate(b) forming an interlevel dielectric layer on the semiconductorsubstrate; (c) forming a copper bottom electrode in the interleveldielectric layer, a top surface of the bottom electrode co-planer with atop surface of the interlevel dielectric layer; (d) forming a conductivediffusion barrier in direct contact with the top surface of the bottomelectrode; (e) forming a MIM dielectric in direct contact with a topsurface of the conductive diffusion barrier; and (f) forming a topelectrode in direct contact with a top surface of the MIM dielectric.

A fourth aspect of the present invention is a method of fabricating anelectronic device, comprising: (a) providing a semiconductor substrate;(b) forming an inter level dielectric layer on the semiconductorsubstrate; (c) forming a copper bottom electrode in the interleveldielectric layer; (d) forming a conductive diffusion barrier in directcontact with a top surface of the bottom electrode, the top surface ofthe bottom electrode recessed below a top surface of the interleveldielectric layer, the top surface of the conductive diffusion barrierco-planer with the top surface of the interlevel dielectric; (e) forminga MIM dielectric in direct contact with the top surface of theconductive diffusion barrier; and (f) forming a top electrode in directcontact with a top surface of the MIM dielectric.

BRIEF DESCRIPTION OF DRAWINGS

The features of the invention are set forth in the appended claims. Theinvention itself, however, will be best understood by reference to thefollowing detailed description of an illustrative embodiment when readin conjunction with the accompanying drawings, wherein:

FIG. 1A, is a cross-sectional view of an exemplary MIM capacitoraccording to the present invention;

FIG. 1B is a top plan view and FIG. 1C a cross-sectional view throughline 1C-1C of FIG. 1B, of an interconnect structure incorporating a MIMcapacitor according to the present invention;

FIGS. 2A through 2F are cross-sectional views illustrating fabricationof a MIM capacitor according to a first embodiment of the presentinvention;

FIG. 3A is a top view and FIG. 3B is a cross-sectional view through line3B-3B of FIG. 3A, of the contact to a resistor according to the presentinvention;

FIGS. 4A through 4E are cross-sectional views illustrating fabricationof a MIM capacitor according to a second embodiment of the presentinvention;

FIGS. 5A through 5F are cross-sectional views illustrating fabricationof a MIM capacitor according to a third embodiment of the presentinvention;

FIGS. 6A through 6F are cross-sectional views illustrating fabricationof a MIM capacitor according to a fourth embodiment of the presentinvention; and

FIGS. 7A through 7F are cross-sectional views illustrating fabricationof a MIM capacitor according to a fifth embodiment of the presentinvention.

DETAILED DESCRIPTION

FIG. 1A, is a cross-sectional view of an exemplary MIM capacitor 100according to the present invention. In FIG. 1A, MIM capacitor 100includes a bottom electrode 105 comprising a copper core conductor 110and a conductive liner 115. MIM capacitor 100 further includes aconductive diffusion barrier 120 formed on a top surface 125 of bottomelectrode 105, a dielectric layer 130 formed on a top surface 135 ofconductive diffusion barrier 120 and a top electrode 140 formed on a topsurface 145 of MIM dielectric 130. Diffusion barrier 120 is intended toprevent copper diffusion out of bottom electrode 105 as well as preventformation of CuO by reaction of copper core conductor 110 with MIMdielectric 130 when dielectric MIM 130 includes oxides. Top electrode140 includes a core conductor 155, an optional bottom conductor 160 andan optional top conductor 165. While in FIG. 1A, conductive diffusionbarrier 120 extends past sidewalls 150 of lower electrode 105 thisfeature does not occur in each and every embodiment of the presentinvention. The geometrical relationships between bottom electrode 105,conductive diffusion barrier 120, dielectric 130 and top electrode 140are described infra in relationship to each of the various embodimentsof the present invention.

In one example, conductive liner 115 comprises Ta, TaN or combinationsof layers thereof. In one example, conductive diffusion barrier 120includes a layer about 5 to 200 nm in thickness of a refractory metalsuch as W, Ta or TaN, a conductive material such as WN, TaN, TaSiN, Pt,IrO₂ or RuO₂ or combinations of layers thereof. In one example, MIMdielectric 130 includes a layer about 2 to 20 nm in thickness of SiO₂,Si₃N₄ or SiC, a high K dielectric such as Ta₂O₅, BaTiO₃, HfO₂, ZrO₂ orAl₂O₃, or combinations of layers thereof. In one example, top electrode140 has a thickness of about 50 to 300 nm and core conductor 155 of topelectrode 140 comprises Al or W and top and bottom conductors 160 and165 comprise TiN or TaN. All embodiments of the present inventionutilize these materials in MIM capacitors.

FIG. 1B is a top plan view and FIG. 1C a cross-sectional view throughline 1C-1C of FIG. 1B, of an interconnect structure incorporating a MIMcapacitor according to the present invention. FIGS. 1B and 1C areexemplary of the integration of the MIM capacitor of the presentinvention into the damascened wiring levels of an integrated circuitdevice. An exemplary interlevel dielectric (ILD) stack 170 is formed ona top surface 175 of a semiconductor substrate 180. ILD stack 170includes a first ILD 185 formed on top surface 175 of substrate 180 anda second ILD 190 formed on a top surface 195 of second ILD 190. Formedin first ILD 185 is bottom electrode 105. Bottom electrode 105 alsoserves as an electrical wiring connection to the MIM. Formed in secondILD 190 are conductive diffusion barrier 120, dielectric 130 and topelectrode 140. Also formed in second ILD 195 is a conductor 200 forelectrical connection to top plate 140 of the MIM capacitor through via205. Conductor 200 and via 205 comprises a copper core 210 and aconductive liner 215.

While two ILD levels are illustrated in FIG. 1C, any number of ILDlevels may be used in and integrated circuit device and the MIMcapacitor may be physically located in any two adjacent ILD levels, thebottom electrode in the lower of the two ILD levels, the MIM dielectricand top electrode in the upper of the two ILD levels. The conductivediffusion barrier may be located in either the upper or lower ILD levelor both. Examples of ILD materials include deposited oxides such astetraethoxysilane (TEOS), fluoridated silicon oxide glass (FSG) andother chemical-vapor-deposition (CVD) oxides.

FIGS. 2A through 2F are cross-sectional views illustrating fabricationof a MIM capacitor according to a first embodiment of the presentinvention. In FIG. 2A, an ILD 220 is formed on a top surface 222 ofsemiconductor substrate 224. Formed in ILD 220 are a bottom electrode226A and a conductor 226B. Bottom electrode 226A includes a copper coreconductor 228A and a conductive liner 230A. Conductor 226B includes acopper core conductor 228B and a conductive liner 230B. Conductive linerand ILD materials have been described supra. Bottom electrode 226A andconductor 226B are formed by a damascene process. In a damasceneprocess, trenches are formed in an ILD by photo-lithographicallypatterning a masking layer applied over the ILD, performing a reactiveion etch (RIE) of the ILD, removing the masking layer, depositing aconductive liner, depositing a copper seed layer deposition, copperplating to fill the trench and performing a chemical-mechanical-polish(CMP) process to co-planarize the top surfaces of the copper andconductive liner and ILD. Bottom electrode 226A will become the bottomelectrode of a MIM capacitor and conductor 226B is a typicalinterconnect conductor.

In FIG. 2B, a conductive diffusion barrier layer is deposited,photo-lithographically patterned and an RIE process performed to formconductive diffusion barriers 232A and 232B, a resistor 232C and analignment mark 232D on a top surface 234 of ILD 220. Note conductivediffusion barrier s 232A and 232B overlap first and second conductors226A and 226B respectively. Conductive diffusion barrier materials andthicknesses have been described supra.

In FIG. 2C, a blanket MIM dielectric layer 236 is deposited. MIMdielectric materials and thicknesses have been described supra.

In FIG. 2D, a conductor is deposited, photo-lithographically patternedand RIE etched to form a top electrode 238 on a top surface 240 of MIMdielectric layer 236. Top electrode 238 is aligned over conductivediffusion barrier 232A and bottom electrode 226A. Top electrode 238negatively overlaps (i.e. is smaller than) conductive diffusion barrier232A. Top electrode materials and thicknesses have been described—supra.

In FIG. 2E, an optional RIE stop layer 242 is deposited on top surface240 of MIM dielectric layer 236 and on a top surface 246 and sidewalls248 of top electrode 238. In one example, RIE stop layer 242 has athickness of about 5 to 50 nm and comprises Si₃N₄.

In FIG. 2F, a second ILD layer 250 is deposited on a top surface 252 ofRIE stop layer 242. Conductors 254A, 254B and 254C having integral vias256A, 256B and 256C respectively are formed to electrically contact topelectrode 238, conductor 226B and resistor 232C respectively, throughRIE stop layer 242. Conductors 254A, 254B and 254C are formed by a dualdamascene process. In a dual damascene process, conductors are formed inan ILD by photo-lithographically patterning a first masking layerapplied over the ILD, performing an RIE of the ILD to etch trenches inthe ILD, removing the first masking layer, photo-lithographicallypatterning a second masking layer applied over the ILD and trenches,performing an RIE of the ILD to etch vias in the bottom of the trenches,removing the second masking layer, depositing a conductive liner,depositing a copper seed layer deposition, copper plating to fill thetrench and performing a CMP process to co-planarize the surfaces of thecopper and the conductive liner and ILD.

While two ILD levels are illustrated in FIG. 2F, any number of ILDlevels may be used in an integrated circuit device and the MIM capacitormay be physically located in any two adjacent ILD levels, the bottomelectrode in the lower of the two ILD levels and the conductivediffusion barrier, MIM dielectric and top electrode in the upper of thetwo ILD levels.

FIG. 3A is a top view and FIG. 3B is a cross-sectional view through line3B-3B of FIG. 3A, of the contact to resistor 232C according to thepresent invention. A first conductor 254C1 electrically contacts a firstend 256A of resistor 232C and a second conductor 254C2 electricallycontacts a second end 256B of the resistor. Vias 256C1 and 256C2overlap, respectively, ends 256A and 256B as well as portions of sides258A and 258B adjacent to the ends of resistor 232C.

FIGS. 4A through 4E are cross-sectional views illustrating fabricationof a MIM capacitor according to a second embodiment of the presentinvention. In FIG. 4A, an ILD 320 is formed on a top surface 322 ofsemiconductor substrate 324. Formed in ILD 320 are a bottom electrode326A and a conductor 328A. Bottom electrode 326A includes a copper coreconductor 328A and a conductive liner 330A. Conductor 326B includes acopper core conductor 328B and a conductive liner 330B. Conductive linerand ILD materials have been described supra. Bottom electrode 326A andconductor 326B are formed by a damascene process as describes supra.Bottom electrode 326A will become the bottom electrode of a MIMcapacitor and conductor 326B is a typical interconnect conductor.

In FIG. 4B, core conductors 328A and 328B are recessed by a wet processor an RIE process. A conductive diffusion barrier layer is deposited onILD 320 of sufficient thickness to fill the recesses formed by the coreetching process and a CMP process performed to form recessed conductivediffusion barriers 332A and 332B and co-planarize the conductivediffusion barriers with a top surface 334 of ILD 320. Diffusion barriermaterials and thicknesses have been described supra.

In FIG. 4C, a MIM dielectric 336 and a top electrode 338 (on a topsurface 340 of the MIM dielectric) are formed by deposition of a MIMdielectric layer on top surface 334 of ILD 320 as well as overconductive diffusion barriers 326A and 326B, deposition of a conductivelayer over a top surface of the MIM dielectric layer,photo-lithographically patterning a masking layer applied over theconductive layer to define the extent of MIM dielectric 336 and topelectrode 338, performing an RIE of the MIM dielectric layer and theconductive layer, and removing the masking layer. Top electrode 338 isaligned over recessed conductive diffusion barrier 332A and bottomelectrode 326A. Top electrode 338 positively overlaps (i.e. is largerthan) recessed conductive diffusion barrier 332A. Conductive diffusionbarrier materials and thicknesses, MIM dielectric materials andthicknesses and top electrode materials and thicknesses have beendescribed supra.

In FIG. 4D, an optional RIE stop layer 342 is deposited on a top surface346 and sidewalls 348 of top electrode 338, exposed top surface 334 ofILD 320 and a top surface 343 of recessed conductive diffusion barrier332B. In one example, RIE stop layer 342 has a thickness of about 5 to50 nm and comprises Si₃N₄.

In FIG. 4E, a second ILD layer 350 is deposited on a top surface 352 ofRIE stop layer 342. Conductors 354A and 354B having integral vias 356Aand 356B respectively are formed to electrically contact top electrode338, and recessed conductive diffusion barrier 332B respectively,through RIE stop layer 342. Conductors 354A and 354B are formed by adual damascene process as described supra.

While two ILD levels are illustrated in FIG. 4E, any number of ILDlevels may be used in an integrated circuit device and the MIM capacitormay be physically located in any two adjacent ILD levels, the bottomelectrode in the lower of the two ILD levels and the conductivediffusion barrier, MIM dielectric and top electrode in the upper of thetwo ILD levels.

FIGS. 5A through 5F are cross-sectional views illustrating fabricationof a MIM capacitor according to a third embodiment of the presentinvention. In FIG. 5A, an ILD 420 is formed on a top surface 422 ofsemiconductor substrate 424. Formed in ILD 420 are a bottom electrode426A and a conductor 426B. Bottom electrode 426A includes a copper coreconductor 428A and a conductive liner 430A. Conductor 426B includes acopper core conductor 428B and a conductive liner 430B. Conductive linerand ILD materials have been described supra. Bottom electrode 426A andconductor 426B are formed by a damascene process as describes supra.Bottom electrode 426A will become the bottom electrode of a MIMcapacitor and conductor 426B is a typical interconnect conductor.

In FIG. 5B, core conductors 428A and 428B are recessed by a wet processor an RIE process. A first conductive diffusion barrier layer isdeposited on ILD 420 of sufficient thickness to fill the recesses formedby the etch process and a CMP process performed to form recessedconductive diffusion barriers 432A and 432B and co-planarize therecessed conductive diffusion barriers with a top surface 434 of ILD420. Conductive diffusion barrier materials and thicknesses have beendescribed supra.

In FIG. 5C, an upper conductive diffusion barrier 435A, a resistor 435B,a MIM dielectric 436A and top electrode 438A1 (on a top surface 440 ofthe MIM dielectric) and a cap 438B are formed as follows: First, asecond conductive diffusion barrier layer is deposited on top surface434 of ILD 420 as well as over recessed conductive diffusion barriers432A and 432B. Second, a MIM dielectric layer is deposited on top asurface of the second conductive diffusion barrier layer and aconductive layer is deposited on a top surface of the second conductivediffusion barrier layer. Third, a masking layer applied over theconductive layer is photo-lithographically patterned to define theextent of MIM dielectric 436A, the extent of upper conductive diffusionbarrier 435A and resistor 435B, and an initial extent of top electrode438A1 and the extent of cap 438B. Fourth, an RIE of the MIM dielectriclayer, second conductive diffusion barrier layer and the conductivelayer is performed and the masking layer removed. Conductive diffusionbarrier materials and thicknesses have been described supra.

In FIG. 5D, a masking layer applied, is photo-lithographically patternedand an RIE performed to define the final extent of top electrode 438A2as well as to remove cap 438B (see FIG. 5C) from over MIM dielectric436B. The masking layer is then removed. Top electrode 438A2 is alignedover recessed conductive diffusion barrier 432A and upper conductivediffusion barrier 435A and bottom electrode 426A. Top electrode 438A2negatively overlaps (i.e. is smaller than) upper conductive diffusionbarrier 435A. Upper conductive diffusion barrier 435A positivelyoverlaps (i.e. is larger than) recessed conductive diffusion barrier432A. MIM dielectric materials and thicknesses and top electrodematerials and thicknesses have been described supra.

In FIG. 5E, an optional RIE stop layer 442 is deposited on a top surface443 and sidewalls 444 of top electrode 438A2, a top surface 445A andsidewalls 446A of MIM dielectric 436A/upper conductive diffusion barrier435A, top surface 445B and sidewalls 446B of MIM dielectric436B/resistor 435B, exposed top surface 434 of ILD 420, and a topsurface 447 of recessed conductive diffusion barrier 432B. In oneexample, RIE stop layer 442 has a thickness of about 5 to 50 nm andcomprises Si₃N₄.

In FIG. 5F, a second ILD layer 450 is deposited on a top surface 452 ofRIE stop layer 442. Conductors 454A, 454B and 454C having integral vias456A, 456B and 456C respectively are formed to electrically contact topelectrode 438A2, recessed conductive diffusion barrier 432B and resistor435B respectively, through RIE stop layer 442. Conductors 454A and 454Bare formed by a dual damascene process as described supra. While two ILDlevels are illustrated in FIG. 5F, any number of ILD levels may be usedin an integrated circuit device and the MIM capacitor may be physicallylocated in any two adjacent ILD levels, the bottom electrode in thelower of the two ILD levels and the conductive diffusion barrier, MIMdielectric and top electrode in the upper of the two ILD levels.

FIGS. 6A through 6F are cross-sectional views illustrating fabricationof a MIM capacitor according to a fourth embodiment of the presentinvention. In FIG. 6A, an ILD 520 is formed on a top surface 522 ofsemiconductor substrate 524. Formed in ILD 520 are a bottom electrode526A and a conductor 526A. Bottom electrode 526A includes a copper coreconductor 528A and a conductive liner 530A. Conductor 526B includes acopper core conductor 528B and a conductive liner 530B. Conductive linerand ILD materials have been described supra. Bottom electrode 526A andconductor 526B are formed by a damascene process as described supra.Bottom electrode 526A will become the bottom electrode of a MIMcapacitor and conductor 526B is a typical interconnect conductor.

In FIG. 6B, a dielectric diffusion barrier layer 531 is formed on top ofILD 520, bottom electrode 526A and conductor 526B by deposition.Examples of suitable materials for dielectric diffusion barrier 531include Si₃N₄, SiC, SiO₂ over Si₃N₄ and FSG over Si3N4 having athickness of about 5 to 50 nm.

In FIG. 6C, a conductive diffusion barrier 532A is formed over bottomelectrode 526A (and overlapping ILD 520) and a resistor 532B is formedon a top surface 534 of ILD 520 by a damascene process as describedsupra. Diffusion barrier materials and thicknesses have been describedsupra.

In FIG. 6D, first a MIM dielectric layer and then a conductive layer aredeposited, photo-lithographically patterned and RIE etched to form a topelectrode 538 on a top surface 540 of a MIM dielectric 536. Topelectrode 538 is aligned over conductive diffusion barrier 532A andbottom electrode 526A. Top electrode 538 positively overlaps (i.e. islarger than) conductive diffusion barrier 532A. Conductive diffusionbarrier 532A positively overlaps (i.e. is larger than) lower electrode526A. MIM dielectric materials and thicknesses and top electrodematerials and thicknesses have been described supra.

In FIG. 6E, an optional RIE stop layer 542 is deposited on top surface544 of top electrode 538 and sidewalls 545 of top electrode 538/MIMdielectric 536 and on a top surface 546 of resistor 532B and a topsurface 547 of dielectric diffusion barrier 531. In one example, RIEstop layer 542 has a thickness of about 5 to 50 nm and comprises Si₃N₄.

In FIG. 6F, a second ILD layer 550 is deposited on a top surface 552 ofRIE stop layer 542. Conductors 554A, 554B and 554C having integral vias556A, 556B and 556C respectively are formed to electrically contact topelectrode 538, conductor 526B and resistor 532B respectively, throughRIE stop layer 542. Conductors 554A, 554B and 554C are formed by a dualdamascene process as described supra.

While two ILD levels are illustrated in FIG. 6F, any number of ILDlevels may be used in an integrated circuit device and the MIM capacitormay be physically located in any two adjacent ILD levels, the bottomelectrode in the lower of the two ILD levels and the conductivediffusion barrier, MIM dielectric and top electrode in the upper of thetwo ILD levels.

FIGS. 7A through 7F are cross-sectional views illustrating fabricationof a MIM capacitor according to a fifth embodiment of the presentinvention. In FIG. 7A, an ILD 620 is formed on a top surface 622 ofsemiconductor substrate 624. Formed in ILD 620 are a bottom electrode626A, a conductor 626B and a resistor contact 626C. Bottom electrode626A includes a copper core conductor 628A and a conductive liner 630A.Conductor 626B includes a copper core conductor 628B and a conductiveliner 630B. Resistor contact 626C includes a copper core conductor 628Cand a conductive liner 630C. Conductive liner and ILD materials havebeen described supra. Bottom electrode 626A, conductor 626B and resistorcontact 626C are formed by a damascene process as describes supra.Bottom electrode 626A will become the bottom electrode of a MIM andconductor 626B is a typical interconnect conductor.

In FIG. 7B, core conductors 628A, 628B and 628C are recessed by a wetprocess or an RIE process, a first conductive diffusion barrier layer isdeposited on ILD 620 of sufficient thickness to fill the recesses formedby the etch process and a CMP process performed to form recessedconductive diffusion barriers 632A, 632B and 632C and co-planarize therecessed conductive diffusion barriers with a top surface 634 of ILD620. Conductive diffusion barrier materials and thicknesses have beendescribed—supra.

In FIG. 7C, an upper conductive diffusion barrier 635A, a resistor 635B,and an alignment mark 635C are formed by depositing a conductivediffusion barrier layer on top surface 634 of ILD 620,photo-lithographically patterning a masking layer applied to theconductive diffusion barrier layer, performing an RIE process andremoving the masking layer. Conductive diffusion barrier materials andthicknesses have been described supra.

In FIG. 7D, a MIM dielectric 636A covering upper conductive diffusionbarrier 635A, a top electrode 638A covering MIM dielectric 636A and adielectric cap 636B covering resistor 635B and a conductive cap 638Bcovering dielectric cap 636B are formed as follows: First, a MIMdielectric layer is deposited over upper conductive diffusion barrier635A, resistor 635B, alignment mark 635C and exposed top surface 634 ofILD 620. Second, a masking layer is applied over MIM dielectric layerand photo-lithographically patterned to define the extent of MIMdielectrics 636A and 636B, an RIE of the MIM dielectric layer isperformed and the masking layer removed. Third, a conductive layer isdeposited over MIM dielectrics 636A and 636B, alignment mark 635C andexposed top surface 634 of ILD 620. Fourth, a masking layer is appliedover the conductive layer to define the extent of a top electrode 638Aand a conductive cap 636B, an RIE of the conductive layer is performedand the masking layer removed. Top electrode 638 is aligned over MIMdielectric 636A and MIM dielectric is aligned over upper conductivediffusion barrier 635A and bottom electrode 626A. Top electrode 638Apositively overlaps (i.e. is larger than) MIM dielectric 636A and MIMdielectric 636A positively overlaps (I.e. is larger than) upperconductive diffusion barrier 635A. MIM dielectric materials andthicknesses and top electrode materials and thicknesses have beendescribed supra.

In FIG. 7E, an optional RIE stop layer 642 is deposited on a top surface643 and sidewalls 644 of top electrode 638A, top surface 645 andsidewalls 646 of conductive cap 636B, exposed top surface 634 of ILD620, a top surface 647 of recessed conductive diffusion barrier 632B andover alignment mark 635C. In one example, RIE stop layer 642 has athickness of about 5 to 50 nm and comprises Si₃N₄.

In FIG. 7F, a second ILD layer 650 is deposited on a top surface 652 ofRIE stop layer 642. Conductors 654A and 654B having integral vias 656Aand 656B respectively are formed to electrically contact top electrode638A and recessed conductive diffusion barrier 632B through RIE stoplayer 642 respectively. Conductors 654A and 654B are formed by a dualdamascene process as described supra.

While two ILD levels are illustrated in FIG. 7F, any number of ILDlevels may be used in an integrated circuit device and the MIM capacitormay be physically located in any two adjacent ILD levels, the bottomelectrode in the lower of the two ILD levels and the conductivediffusion barrier, MIM dielectric and top electrode in the upper of thetwo ILD levels.

Thus, the present invention provides a MIM structure and fabricationmethod compatible with copper interconnection technology as well ascompatible resistor and alignment mark structures.

The description of the embodiments of the present invention is givenabove for the understanding of the present invention. It will beunderstood that the invention is not limited to the particularembodiments described herein, but is capable of various modifications,rearrangements and substitutions as will now become apparent to thoseskilled in the art without departing from the scope of the invention.Therefore, it is intended that the following claims cover all suchmodifications and changes as fall within the true spirit and scope ofthe invention.

1. An electronic device, comprising: an interlevel dielectric layerformed on a semiconductor substrate; a copper bottom electrode formed insaid interlevel dielectric layer, a top surface of said bottom electrodeco-planer with a top surface of said interlevel dielectric layer; aconductive diffusion barrier in direct contact with said top surface ofsaid bottom electrode; a MIM dielectric in direct contact with a topsurface of said conductive diffusion barrier; and a top electrode indirect contact with a top surface of said MIM dielectric.
 2. Theelectronic device of claim 1, wherein said conductive diffusion barrierand said MIM dielectric both extend past at least two sides of saidbottom electrode.
 3. The electronic device of claim 1, furtherincluding: a dielectric diffusion barrier layer formed on said topsurface of said interlevel dielectric layer; and wherein said topsurface of said conductive diffusion barrier is co-planer with a topsurface of said dielectric diffusion barrier layer.
 4. The electronicdevice of claim 1, wherein said bottom electrode includes an upperportion comprising an additional conductive diffusion barrier, saidupper portion in contact with said conductive diffusion barrier.
 5. Theelectronic device of claim 4, wherein said additional conductivediffusion barrier comprises about 5 to 200 nm of a refractory metal, W,Ta, TaN, WN, TaN, TaSiN, Pt, IrO₂ or RuO₂ or combinations thereof. 6.The electronic device of claim 1, wherein said conductive diffusionbarrier comprises about 5 to 200 nm of a refractory metal, W, Ta, TaN,WN, TaN, TaSiN, Pt, IrO₂ or RuO₂ or combinations thereof.
 7. Theelectronic device of claim 1, wherein said MIM dielectric comprisesabout 2 to 20 nm of SiO₂, Si₃N₄ or SiC, a high K dielectric, Ta₂O₅,BaTiO₃, HfO₂, ZrO₂ or Al₂O₃, or combinations of layers thereof.
 8. Theelectronic device of claim 1, wherein said top electrode comprises Al orW.
 9. An electronic device, comprising: an interlevel dielectric layerformed on a semiconductor substrate; a copper bottom electrode formed insaid interlevel dielectric layer; a conductive diffusion barrier indirect contact with a top surface of said bottom electrode, said topsurface of said bottom electrode recessed below a top surface of saidinterlevel dielectric layer, said top surface of said conductivediffusion barrier co-planer with said top surface of said interleveldielectric layer; a MIM dielectric in direct contact with a top surfaceof said conductive diffusion barrier; and a top electrode in directcontact with a top surface of said MIM dielectric.
 10. The electronicdevice of claim 9, wherein said conductive diffusion barrier and saidMIM dielectric both extend past at least two sides of said bottomelectrode.
 11. The electronic device of claim 9, wherein said conductivediffusion barrier comprises about 5 to 200 nm of a refractory metal, W,Ta, TaN, WN, TaN, TaSiN, Pt, IrO₂ or RuO₂ or combinations thereof. 12.The electronic device of claim 9, wherein said MIM dielectric comprisesabout 2 to 20 nm of SiO₂, Si₃N₄ or SiC, a high K dielectric, Ta₂O₅,BaTiO₃, HfO₂, ZrO₂ or Al₂O₃, or combinations thereof.
 13. The electronicdevice of claim 9, wherein said top electrode comprises Al or W.
 14. Amethod of fabricating an electronic device, comprising: (a) providing asemiconductor substrate (b) forming an interlevel dielectric layer onsaid semiconductor substrate; (c) forming a copper bottom electrode insaid interlevel dielectric layer, a top surface of said bottom electrodeco-planer with a top surface of said interlevel dielectric layer; (d)forming a conductive diffusion barrier in direct contact with said topsurface of said bottom electrode; (e) forming a MIM dielectric in directcontact with a top surface of said conductive diffusion barrier; and (f)forming a top electrode in direct contact with a top surface of said MIMdielectric.
 15. The method of claim 14, wherein said conductivediffusion barrier and said MIM dielectric both extend past at least twosides of said bottom electrode.
 16. The method of claim 14, furtherincluding: (g) after step (c) forming a dielectric diffusion barrierlayer on said top surface of said interlevel dielectric layer; andwherein said top surface of said conductive diffusion barrier isco-planer with a top surface of said dielectric diffusion barrier layer.17. The method of claim 14, wherein said bottom electrode includes anupper portion comprising an additional conductive diffusion barrier,said upper portion in contact with said conductive diffusion barrier.18. The method of claim 17, wherein said additional conductive diffusionbarrier comprises about 5 to 200 nm of a refractory metal, W, Ta, TaN,WN, TaN, TaSiN, Pt, IrO₂ or RuO₂ or combinations thereof.
 19. The methodof claim 14, wherein said conductive diffusion barrier comprises about 5to 200 nm of a refractory metal, W, Ta, TaN, WN, TaN, TaSiN, Pt, IrO₂ orRuO₂ or combinations thereof.
 20. The method of claim 1, wherein saidMIM dielectric comprises about 2 to 20 nm of SiO₂, Si₃N₄ or SiC, a highK dielectric, Ta₂O₅, BaTiO₃, HfO₂, ZrO₂ or Al₂O₃, or combinationsthereof.
 21. The method of claim 14, wherein said top electrodecomprises Al or W.
 22. The method of claim 14, wherein step (d) furthercomprises simultaneously forming a resistor, an alignment mark or both aresistor and an alignment mark with said conductive diffusion barrier.23. The method of claim 22, wherein said resistor, said alignment markor both said resistor and said alignment mark comprise about 5 to 200 nmof a refractory metal, W, Ta, TaN, WN, TaN, TaSiN, Pt, IrO₂ or RuO₂ orcombinations of layers thereof.
 24. The method of claim 14, furtherincluding (g) after step (f) depositing a reactive ion etch layer overall exposed surfaces of said conductive diffusion barrier, said MIMdielectric and said interlevel dielectric layer.
 25. A method offabricating an electronic device, comprising: (a) providing asemiconductor substrate; (b) forming an interlevel dielectric layer onsaid semiconductor substrate; (c) forming a copper bottom electrode insaid interlevel dielectric layer; (d) forming a conductive diffusionbarrier in direct contact with a top surface of said bottom electrode,said top surface of said bottom electrode recessed below a top surfaceof said interlevel dielectric layer, said top surface of said conductivediffusion barrier co-planer with said top surface of said interleveldielectric; (e) forming a MIM dielectric in direct contact with said topsurface of said conductive diffusion barrier; and (f) forming a topelectrode in direct contact with a top surface of said MIM dielectric.26. The method of claim 25, wherein said conductive diffusion barrierand said MIM dielectric both extend past at least two sides of saidbottom electrode.
 27. The method of claim 25, wherein said conductivediffusion barrier comprises about 5 to 200 nm of a refractory metal, W,Ta, TaN, WN, TaN, TaSiN, Pt, IrO₂ or RuO₂ or combinations thereof. 28.The method of claim 25, wherein said MIM dielectric comprises about 2 to20 nm of SiO₂, Si₃N₄ or SiC, a high K dielectric, Ta₂O₅, BaTiO₃, HfO₂,ZrO₂ or Al₂O₃, or combinations thereof.
 29. The method of claim 25,wherein said top electrode comprises Al or W.
 30. The method of claim25, further including (g) after step (f) depositing a reactive ion etchlayer over all exposed surfaces of said conductive diffusion barrier,said MIM dielectric and said interlevel dielectric layer.